缓冲, 谐振,功率因数校正(PFC)用电容器选型指南

特点					I_RMS / Pulse Handling Capability
缓冲,谐振功率因数校正(PFC)	B3265* THB: 40°C / 93% RH / V_RDC / 1000h Size: Small Temperature: 110°C Compact size High I_RMS	*B3268 (MFP)** THB: 40°C / 93%RH / 56days / Unpowered Size: Large Temperature: 110°C High dv/dt	*B3264B (MMPK)** THB: 60°C / 95% RH / V_RDC / 1000h Size: Medium Temperature: 125°C Higher temperature High I_RMS High dv/dt	*B3267L** THB: 40°C / 93% RH / V_RDC / 1000h Size: Small Temperature: 125°C Higher temperature	*B3265S** THB: 40°C / 93%RH / V_RDC / 1000h Size: Medium Temperature: 110°C IGBT mounted Compact	*B3268S (MFP)** THB: 40°C / 93%RH / 56days / Unpowered Size: Large Temperature: 110°C IGBT mounted High dv/dt
电压范围	250 V_DC → 2000 V_DC	400 V_DC → 2500 V_DC	400 V_DC → 2000 V_DC	250 V_DC → 2000 V_DC	850 V_DC → 2000 V_DC	1000 V_DC → 2000 V_DC
电容范围	0.001 µF → 40 µF	0.47 nF → 1.5 µF	2.2 nF → 560 nF	0.001 µF → 1 µF	68 nF → 5.6 µF	22 nF → 68 nF
引线间距	10 mm → 52.5 mm	15 mm → 37.5 mm	10 mm → 22.5 mm	10 mm → 15 mm	According to main IGBTs in the market.	According to main IGBTs in the market.
参考标准	IEC 60384-16:2005 IEC 60068-2:2006	IEC 60384-16:2005 IEC 60068-2:2006	IEC 60384-16:2005 IEC 60068-2:2006	IEC 60384-16:2005 IEC 60068-2:2006	IEC 60384-16:2005 IEC 60068-2:2006	IEC 60384-16:2005 IEC 60068-2:2006
典型结构					*关于可直接在IGBT上组装的完整端子范围，请参阅产品系列规格书。	*关于可直接在IGBT上组装的完整端子范围，请参阅产品系列规格书。